A New Method for Lift-off of III-Nitride Semiconductors for Heterogeneous Integration
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چکیده
منابع مشابه
A New Method for Lift-off of III-Nitride Semiconductors for Heterogeneous Integration
The release and transfer of GaN epilayers to other substrates is of interest for a variety of applications, including heterogeneous integration of silicon logic devices, III-V power devices and optical devices. We have developed a simple wet chemical etching method to release high-quality epitaxial III-nitride films from their substrates. This method builds on a nanoepitaxial lateral overgrowth...
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ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2010
ISSN: 1931-7573,1556-276X
DOI: 10.1007/s11671-010-9601-6